FQPF10N60C
FQPF10N60B
FQPF10N60
10N60
10NK60
600V 9.5A TO-220 BC18
Description:
These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology
SPEK:
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25C:9.5A (Tc)
Vgs(th) (Max) @ Id:4V @ 250A
Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2040pF @ 25V
Power Dissipation (Max):50W (Tc)
Rds On (Max) @ Id, Vgs:730 mOhm @ 4.75A, 10V
Operating Temperature:-55C ~ 150C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
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