Seri Diode ini menggunakan prinsip Schottky Barrier di area yang luas
metal-to-silicon power diode. Fitur geometri state-of-the-art
logam penghalang krom, konstruksi epitaxial dengan passivation oksida
dan kontak tumpang tindih logam. Idealnya cocok digunakan sebagai penyearah
inverter dengan voltase rendah, inverter frekuensi tinggi ,oda dioda bebas, dan
polaritas dioda proteksi.
Features
.Extremely Low VF
.Low Power Loss/High Efficiency
.Low Stored Charge, Majority Carrier Conduction
.Shipped in plastic bags, 500 per bag
.Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number
.Pb-Free Packages are Available* Mech
Mechanical Characteristics:
.Case: Epoxy, Molded
.Weight: 1.1 Gram (Approximately)
.Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
.Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
.Polarity: Cathode indicated by Polarity Band
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